Title :
Promising Low Noise Amplifiers Using 90nm CMOSFET Devices
Author :
Hsin-Chia Yang ; Jui-Ming Tsai ; Jhe-Chuan Yeh ; Cheng-Huang Tsao ; SungChing Chi ; Tsing-Yung Chang ; Mu-Chun Wang
Author_Institution :
Ming Hsin Univ. of Sci. & Technol., Hsinchu, Taiwan
Abstract :
The wide availability of LNA components varying from 6.0 GHz to 30.0 GHz is delivered using TSMC 90nm CMOS processes. The voltage gains are substantially improved and the noise figures are noticeably reduced. In addition to the multiplication of gains, the multiple stages of amplifiers give the benefits of taking control of noise figures (NF) and approaches to the one of the pre-amplifier. Even though NF gets higher for higher RF frequencies, the suppression of minimum noise figures is to be observed.
Keywords :
CMOS integrated circuits; MOSFET; low noise amplifiers; CMOSFET device; LNA component; RF frequency; TSMC 90nm CMOS process; frequency 6 GHz to 30 GHz; low noise amplifier; noise figure; size 90 nm; CMOS integrated circuits; Linearity; Low-noise amplifiers; Noise; Noise figure; Power amplifiers;
Conference_Titel :
Wireless Communications, Networking and Mobile Computing (WiCOM), 2012 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-61284-684-2
DOI :
10.1109/WiCOM.2012.6478624
