Title :
Theoretical performance of GaAs solar cell, with band gap gradient layer on the back region
Author :
Benslimane, Hassane ; Abderahman, Hemmani ; Abderrachid, Helmaoui
Author_Institution :
Phys. Dept., Univ. of Bechar, Bechar, Algeria
Abstract :
GaAs solar cell with graded band gap layer in the back region is analyzed as a function of the electric field created by band gap gradient and the base thickness. Studies are reported at AM 1.5, and unity solar concentration. The optimum thickness of the base region is determined. The performance of the cell strongly depends on the electric field. Comparison with the GaAs cell including high-low junction at the back surface show that the use of back surface field created by graded band gap improve the performance of the GaAs conventional cell.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; solar cells; GaAs-AlGaAs; band gap gradient layer; electric field; graded band gap layer; high-low junction; n-p heterojunction back surface field; optimum base thickness; solar cell; unity solar concentration; Equations; Gallium arsenide; Heterojunctions; Laboratories; Microelectronics; Photonic band gap; Photovoltaic cells; Physics; Semiconductor devices; Surface treatment; GaAs solar cell; Graded band gap; back surface field;
Conference_Titel :
Microelectronics (ICM), 2009 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-5814-1
DOI :
10.1109/ICM.2009.5418597
