Study of field plate effects onAlGaN/GaN HEMTs

In this paper we carry out study of the Field Plate (FP) effects on AlGaN/GaN HEMTs (high electron mobility transistors) by modeling the electric field in the structure FP-HEMT (with Field Plate). It consist to analyze the maximum of the electric field according to the gate voltage and drain voltage taking into account several technological parameters of the Field Plate such as the passivation layer thickness, the FP length and the distance gate-drain. We have shown that, the main functions of the field plate are to reshape the electric field distribution in the channel and to reduce its peak value on the drain side of the gate edge. The benefit is an increase of the breakdown voltage and a reduced high-field trapping effect.