Kink reduction using selective back oxide structure

This paper describes a method for reducing the kink effect observed in the I-V output characteristics of a partially depleted SOI MOSFETs. It involves the use of back oxide below drain and source and also below part of the channel. Silvaco TCAD tools are used for fabrication and device simulation. Basic mechanism leading to the generation of kink in SOI MOS devices is studied. Effect of selective back oxide structure with various gap widths and thicknesses help to eliminate the kink effect is also verified. Results obtained through numerical simulations indicated that kink can be significantly reduced with the use of selective back oxide structure while preserving the major advantages offered by the conventional SOI structure.