Study of ZnSe/GaAs interface state by femtosecond time-resolved reflectance difference spectroscopy

Author

Wong, K.S. ; Wang, H. ; Yang, Z. ; Sou, I.K. ; Wong, G.L.K.

Author_Institution

Dept. of Phys., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong

fYear

1998

fDate

3-8 May 1998

Firstpage

267

Lastpage

268

Abstract

Summary form only given. We believe for the first time, femtosecond time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of semiconductor interface state. The instantaneous screening due to photoexcited carriers and the 20- to 30-ps recovery time of the 2.7-eV ZnSe-GaAs interface state associated with Zn-As bonds is observed in the TRDS spectra.

Keywords

II-VI semiconductors; gallium arsenide; high-speed optical techniques; interface states; reflectivity; time resolved spectroscopy; zinc compounds; 2.7 eV; 20 ps; 30 ps; Zn-As; Zn-As bonds; ZnSe-GaAs; ZnSe-GaAs interface state; ZnSe/GaAs interface state; femtosecond time-resolved reflectance difference spectroscopy; instantaneous screening; photoexcited carriers; ps recovery time; relaxation processes; semiconductor interface state; Filling; Gallium arsenide; Interface states; Laser excitation; Optical surface waves; Probes; Reflectivity; Spectroscopy; Transmission lines; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676149

Filename

676149