GRT model of RTS noise in MOSFETs

Author

Sikula, Josef ; Pavelka, Jan ; Tacano, Munecazu ; Toita, Masato

Author_Institution

Brno Univ. of Technol., Brno, Czech Republic

fYear

2009

fDate

19-22 Dec. 2009

Firstpage

296

Lastpage

299

Abstract

Random Telegraph Signal (RTS) noise in submicron MOSFETs showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics, is analyzed using generation-recombination-tunneling model of current modulation in order to explain quadratic dependence of capture rate on current. Proposed model of two-step charge carrier quantum transitions involving secondary trap at the channel and gate oxide interface better represents observed complex switching phenomena in nanoscale devices, as is confirmed by presented experimental results.

Keywords

MOSFET; electron-hole recombination; random noise; semiconductor device models; semiconductor device noise; tunnelling; MOSFET; RTS noise; Shockley-Read-Hall kinetics; generation-recombination-tunneling model; random telegraph signal noise; two-step charge carrier quantum transitions; Acoustical engineering; Charge carriers; Electron traps; Fluctuations; Kinetic theory; MOSFETs; Noise generators; Semiconductor device noise; Telegraphy; Tunneling; Burst noise; MOSFETs; modeling; quantum theory; semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2009 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-5814-1

Type

conf

DOI

10.1109/ICM.2009.5418625

Filename

5418625