DocumentCode :
3542182
Title :
Didactic simulation of a metal oxide semiconductor structure
Author :
Magrez, Hamid ; Kassmi, Khalil ; Ziyyat, Abdelhak
Author_Institution :
Electron. & Syst. Lab., Mohammed First Univ., Oujda, Morocco
fYear :
2009
fDate :
19-22 Dec. 2009
Firstpage :
300
Lastpage :
303
Abstract :
In this paper, we present an interactive simulation of a Metal-Oxide-Semiconductor structure, based on a qualitative approach. The code is written in ActionScript/Flash to enjoy all the benefits of this technology in the multimedia field. In addition, our simulation combines theoretical and practical concepts on the same graphical interface: it shows the impact of physical and electrical parameters on the behavior of a MOS structure or a transistor TMOS. Moreover, it provides the physical reasons of the parameters influence that can serve to evaluate the relevance of approximations commonly used. This simulation is applied in engineering education.
Keywords :
MOSFET; electronic engineering computing; interactive systems; semiconductor device models; ActionScript; Flash; MOS structure; didactic simulation; interactive simulation; metal-oxide-semiconductor structure; transistor TMOS; Dielectric materials; Electromagnetic analysis; Electronic components; Electrostatics; Engineering education; Inorganic materials; MOSFETs; Microelectronics; Neodymium; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics (ICM), 2009 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-5814-1
Type :
conf
DOI :
10.1109/ICM.2009.5418626
Filename :
5418626
Link To Document :
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