Modeling of the pH-ISFET thermal drift

Author

Naimi, S.E. ; Hajji, B. ; Habbani, Y. ; Humenyuk, I. ; Launay, J. ; Temple-Boyer, P.

Author_Institution

ENSA, Dept. of Electr. Eng., Mohammed 1st Univ., Oujda, Morocco

fYear

2009

fDate

19-22 Dec. 2009

Firstpage

288

Lastpage

291

Abstract

The temperature effect on pH-ISFET response has been modeled by taking into account the dependence with temperature of the dissociation constants Ka, Kb at the SiO₂/Si₃N₄ electrolyte/insulator interface. The relationship of Ka, Kb versus the temperature is implemented in the development model based in the site-binding model combined with the level 3 of PSPICE model of MOSFET. The model parameters were extracted using genetic algorithm and the simulations results using these values showed a good fit between modeling and experimental data on a large temperature range.

Keywords

genetic algorithms; ion sensitive field effect transistors; semiconductor device models; silicon compounds; PSPICE model; SiO₂-Si₃N₄; genetic algorithm; ion sensitive field effect transistors; pH-ISFET; site-binding model; temperature effect; thermal drift; Biosensors; Electrodes; MOSFET circuits; Microelectronics; SPICE; Temperature dependence; Temperature sensors; Thermal sensors; Thermal stability; Threshold voltage; Modeling; Thermal dependency; pH-ISFET Sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2009 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-5814-1

Type

conf

DOI

10.1109/ICM.2009.5418627

Filename

5418627