Title :
Modeling of the pH-ISFET thermal drift
Author :
Naimi, S.E. ; Hajji, B. ; Habbani, Y. ; Humenyuk, I. ; Launay, J. ; Temple-Boyer, P.
Author_Institution :
ENSA, Dept. of Electr. Eng., Mohammed 1st Univ., Oujda, Morocco
Abstract :
The temperature effect on pH-ISFET response has been modeled by taking into account the dependence with temperature of the dissociation constants Ka, Kb at the SiO2/Si3N4 electrolyte/insulator interface. The relationship of Ka, Kb versus the temperature is implemented in the development model based in the site-binding model combined with the level 3 of PSPICE model of MOSFET. The model parameters were extracted using genetic algorithm and the simulations results using these values showed a good fit between modeling and experimental data on a large temperature range.
Keywords :
genetic algorithms; ion sensitive field effect transistors; semiconductor device models; silicon compounds; PSPICE model; SiO2-Si3N4; genetic algorithm; ion sensitive field effect transistors; pH-ISFET; site-binding model; temperature effect; thermal drift; Biosensors; Electrodes; MOSFET circuits; Microelectronics; SPICE; Temperature dependence; Temperature sensors; Thermal sensors; Thermal stability; Threshold voltage; Modeling; Thermal dependency; pH-ISFET Sensor;
Conference_Titel :
Microelectronics (ICM), 2009 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-5814-1
DOI :
10.1109/ICM.2009.5418627
