Hydrodynamic simulation of drift mobility in n-Hg0.8Cd0.2Te

Author

Daoudi, Mebarka ; Belghachi, Abderrahmane ; Varani, Luca

Author_Institution

Lab. of Semicond. devices Phys., Univ. of Bechar, Bechar, Algeria

fYear

2009

fDate

19-22 Dec. 2009

Firstpage

284

Lastpage

287

Abstract

In this paper, the transport properties of Hg_0.8Cd_0.2Te have been investigated at 77 K using the hydrodynamic model. We remarked that ionized impurity scattering mechanism plays a dominant role in this material at low electric field. The drift velocity, mean energy and drift mobility are determined as a function of electric field strength. Comparison is made with Monte Carlo and experimental results. The obtained velocity- field curve is in good agreement with reported experimental data.

Keywords

II-VI semiconductors; Monte Carlo methods; cadmium compounds; hydrodynamics; impurity scattering; mercury compounds; Hg_0.8Cd_0.2Te; Monte Carlo method; drift mobility; drift velocity; electric field strength; hydrodynamic model; ionized impurity scattering mechanism; mean energy; temperature 77 K; transport properties; velocity-field curve; Effective mass; Electron mobility; High definition video; Hydrodynamics; Laboratories; Monte Carlo methods; Optical scattering; Physics; Semiconductor devices; Semiconductor materials; Application of Monte Carlo method; Drift mobility; Hg0.8Cd0.2Te semiconductor; Hydrodynamic model; Transport properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2009 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-5814-1

Type

conf

DOI

10.1109/ICM.2009.5418630

Filename

5418630