Title :
Low noise and high bandwidth 0.35 µm CMOS transimpedance amplifier
Author :
Hammoudi, Escid ; Mokhtar, Attari
Author_Institution :
Instrum. Lab., Univ. of Sci. & Technol., Algiers, Algeria
Abstract :
This paper describes and analyzes the optimization of a low-noise and high-bandwidth transimpedance amplifier featuring a large dynamic range. The designed amplifier is configured on three identical stages that use an active load. This topology displays a transimpedance gain of 160 kΩ, which is necessary to obtain a high sensitivity. This structure operates at 3.3 V power supply voltage, exhibits a gain bandwidth product of 28 THzΩ and a low-noise level of about 0.862 pA/Hz0.5 This transimpedance amplifier can reach a transmission speed of 350 Mb/s for a photocurrent of 0.5 μA. The predicted performance is verified using simulations by means of PSPICE tools with 0.35 μm CMOS AMS parameters.
Keywords :
CMOS integrated circuits; low noise amplifiers; network topology; operational amplifiers; CMOS transimpedance amplifier; PSPICE tools; dynamic range; low noise amplifiers; network topology; size 0.35 μm; transimpedance gain; voltage 3.3 V; CMOS technology; Transimpedance amplifiers; low-noise amplifier; negative feedback; optical receiver;
Conference_Titel :
Microelectronics (ICM), 2009 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-5814-1
DOI :
10.1109/ICM.2009.5418634
