DocumentCode
3542305
Title
Annealing of Irradiated-Induced defects in power MOSFETs
Author
Bendada, Elmaati ; Malaoui, Abdessamad ; Mabrouki, Mustapha ; Quotb, Kamal ; Raïs, Khalid
Author_Institution
Lab. Geni Industriel, Univ. Sultan Moulay Slimane, Beni Mellal, Morocco
fYear
2009
fDate
19-22 Dec. 2009
Firstpage
236
Lastpage
239
Abstract
An innovative method of device characterization is experimented to qualify annealing Gamma-ray damage in power MOSFETs. The degradation of structural parameters of the body-drain junction for a dose rate of 103.8 rad.mn-1 is presented. Temperature annealing effects, at 100°C, are discussed and analyzed against the evolution of the density trapped oxide and interface charges.
Keywords
annealing; gamma-ray effects; power MOSFET; annealing; body-drain junction; density trapped oxide; device characterization; gamma-ray damage; interface charges; power MOSFET; temperature 100 degC; Annealing; Degradation; Diodes; FETs; Ionizing radiation; MOS devices; MOSFETs; Microelectronics; Temperature; Threshold voltage; Gamma-ray; Power MOSFET; device characterization; structural degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2009 International Conference on
Conference_Location
Marrakech
Print_ISBN
978-1-4244-5814-1
Type
conf
DOI
10.1109/ICM.2009.5418641
Filename
5418641
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