• DocumentCode
    3542444
  • Title

    On-chip temperature sensor with high tolerance for process and temperature variation

  • Author

    Yasuda, Takeo

  • Author_Institution
    Semicond. Technol. Dev. E&TS, IBM Japan, Shiga, Japan
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    1024
  • Abstract
    A reliable temperature sensor circuit that is robust against wafer or chip process and sensing temperature variation is introduced. The circuit includes a reference voltage generator and a constant current bias voltage generator in order to compensate for process and sensing temperature variations. This method eliminates post-production adjustments by circuits such as fuses or non-volatile memory devices. It reduces adjustment test costs and silicon area for these devices, their test control circuits and the interface circuits. Temperature measurement variation of less than 0.6°C by the proposed circuit with a simple low-power structure was verified. The circuit is implemented for a refresh cycle control in 1.5 times of the PAD space on a low-power pseudo-SRAM type DRAM product with a 0.175-μm CMOS bulk process.
  • Keywords
    CMOS memory circuits; DRAM chips; low-power electronics; reference circuits; temperature measurement; temperature sensors; 0.175 micron; CMOS bulk process; DRAM; PAD space; constant current bias voltage generator; low-power structure; on-chip temperature sensor; process variation; pseudo-SRAM; reference voltage generator; refresh cycle control; sensing temperature variations; temperature variation; Atherosclerosis; Circuit testing; Costs; Fuses; Nonvolatile memory; Robustness; Silicon; Temperature measurement; Temperature sensors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1464765
  • Filename
    1464765