Title :
Investigation of the optical properties of PLD-grown Bi2Te3 and Sb2Te3
Author :
Shaik, Muneer ; Motaleb, Ibrahim Abdel
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Abstract :
The optical properties of Bismuth Telluride (Bi2 Te3) and Antimony Telluride (Sb2Te3) thin films grown using pulsed laser deposition (PLD) were investigated. In one set of samples, the two materials were grown, on n-Si substrates, with growth temperatures ranging from 25 to 450°C. In the second set, the films were deposited on microscopic glass slides at 150 °C. The optical properties were studied using Ultra Violet-Visible (UV-Vis) and Fourier Transform Infrared (FTIR) spectroscopy techniques. Absorbance spectra were obtained using UV-Vis spectroscopy, while transmittance spectra were obtained using FTIR spectroscopy. From the FTIR spectra and employing the Tauc plots, the optical band gaps for both materials were obtained. The values of the optical band gaps for Bi2 Te3 are between 0.22-0.26 eV and for Sb2Te3 are between 0.19-0.28 eV.
Keywords :
Fourier transform spectra; antimony compounds; bismuth compounds; infrared spectra; pulsed laser deposition; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; Bi2Te3; FTIR; Fourier transform infrared spectroscopy; PLD; Sb2Te3; UV-vis spectroscopy; absorbance spectra; antimony telluride thin films; bismuth telluride thin films; microscopic glass; optical band gaps; optical properties; pulsed laser deposition; temperature 25 degC to 450 degC; transmittance spectra; ultraviolet-visible spectroscopy; Glass; Optical films; Photonic band gap; Silicon; Substrates; Bi2Te3; FTIR; PLD; Sb2Te3; Tauc plot; UV-Vis;
Conference_Titel :
Electro/Information Technology (EIT), 2013 IEEE International Conference on
Conference_Location :
Rapid City, SD
Print_ISBN :
978-1-4673-5207-9
DOI :
10.1109/EIT.2013.6632708