A new level-up shifter for high speed and wide range interface in ultra deep sub-micron

A new level-up shifter aimed at ultra low core voltage and wide range I/O voltage is designed using a 90 nm CMOS process. The proposed level shifter uses analog circuit techniques and standard zero-Vt NMOS transistor without adding extra mask or process step. No static power consumption and stable duty ratio make this level shifter suitable for wide I/O interface voltage applications in ultra deep sub-micron. These techniques work even at 0.6 V core voltage, 1.65∼3.6V I/O voltage, within 45:55 duty ratio up to 200 MHz.