Title :
3.125 Gb/s power efficient line driver with 2-level pre-emphasis and 2 kV HBM ESD protection
Author :
Iniewski, K. ; Axelrad, V. ; Shibkov, A. ; Balasinski, A. ; Magierowski, S. ; Dlugosz, R. ; Dabrowsi, A.
Author_Institution :
ECE Dept., Alberta Univ., Edmonton, Alta., Canada
Abstract :
The paper presents a power efficient line driver for 3.125 Gb/s operation over FR4-copper backplanes. The circuit has been implemented in 0.18 μm and dissipates 28 mW from a 1.8 V power supply. Efficient ESD protection has been used that provided 2 kV human body model (HBM) reliability.
Keywords :
CMOS integrated circuits; driver circuits; electrostatic discharge; integrated circuit design; power consumption; surge protection; system buses; 0.18 micron; 1.8 V; 2 kV; 28 mW; 3.125 Gbit/s; CMOS driver; FR4-copper backplanes; HBM ESD protection; line driver; pre-emphasis; Backplanes; Bandwidth; Circuits; Copper; Crosstalk; Electrostatic discharge; Hardware; Power dissipation; Power system protection; Signal to noise ratio;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1464798
