DocumentCode :
3542707
Title :
A simple method for restoring passivity in S-parameters using singular value decomposition
Author :
Campbell, E. Douglas ; Morales, Aldo ; Agili, Sedig
fYear :
2010
fDate :
9-13 Jan. 2010
Firstpage :
219
Lastpage :
220
Abstract :
With new high speed data standards, such as USB 3.0, data rate has increased up to 5 Gbps (a 10-fold increase from USB 2.0) creating new challenges for a design engineer. Amid these speeds, issues like crosstalk, signal integrity and bit-error rates are coming to the forefront of the design cycle, especially for consumer electronics-related devices. Therefore, there is a need of accurate methods to characterize device behavior at high frequencies. For instance, S-parameter characterization of high speed interconnect components by full wave field solvers, macromodels and physical measurement are prone to numerical, modeling, and measurement error. This error can lead to non-physical results such as passivity violations. This is a major problem in modern package design where extensive signal integrity simulations are required to validate a systems performance and passivity violations can cause such simulations to fail completely. This paper presents a new method for restoring passivity to non-passive S-parameter data by using singular value decomposition. Simulations show promising results although the method is limited to passivity violations of 1 dB.
Keywords :
S-parameters; high-speed integrated circuits; integrated circuit interconnections; singular value decomposition; S-parameter; bit-error rate; crosstalk; high speed interconnect component; passivity; signal integrity; singular value decomposition; Bit error rate; Crosstalk; Data engineering; Design engineering; Frequency; Scattering parameters; Signal design; Signal restoration; Singular value decomposition; Universal Serial Bus; S-parameters; high-speed interconnects; modeling; passivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Consumer Electronics (ICCE), 2010 Digest of Technical Papers International Conference on
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4244-4314-7
Electronic_ISBN :
978-1-4244-4316-1
Type :
conf
DOI :
10.1109/ICCE.2010.5418695
Filename :
5418695
Link To Document :
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