DocumentCode :
3542758
Title :
On-chip ESD protection for RF I/Os: devices, circuits and models
Author :
Rosenbaum, Elyse ; Hyvonen, Sami
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
1202
Abstract :
ESD protection circuits load RF I/O pads. The negative effect on RF performance can be limited by careful construction and layout of the protection devices. The cancellation technique extends the range of frequencies for which the protection circuit has an acceptably small effect on RF performance.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit layout; integrated circuit reliability; radiofrequency integrated circuits; ESD protection circuits; RF I/O pads; RF performance; cancellation technique; layout; on-chip ESD protection; Biological system modeling; Capacitance; Circuits; Electrostatic discharge; Impedance matching; Low-noise amplifiers; Operating systems; Protection; Radio frequency; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1464809
Filename :
1464809
Link To Document :
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