Title :
Gain enhancement of low-temperature GaAs heterojunction MSM photodetectors
Author :
Culp, J. ; Nabet, B. ; Castro, F. ; Mohamed, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
Abstract :
Summary form only given. Molecular beam epitaxy (MBE) growth of the GaAs at temperature ranges of 200/spl deg/C and 600 /spl deg/C substantially affects its optical and electronic properties. Low-temperature (LT), around 200/spl deg/C, and intermediate temperature (IT), around 400/spl deg/C, growth by MBE has been employed in a variety of device applications including transistors, mixers, and photodetectors. In the device proposed here, a heterojunction of AlGaAs is grown on top of an LT/IT active layer. Trenches are formed in the AlGaGs and Schottky contacts of Ti:Au are deposited in the trenches, laterally contacting the heterojunction interface.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; metal-semiconductor-metal structures; molecular beam epitaxial growth; photodetectors; semiconductor heterojunctions; 200 C; 400 C; 600 C; AlGaAs; AlGaAs-GaAs; GaAs; GaAs heterojunction; MSM photodetectors; Schottky contacts; Ti-Au; Ti:Au; active layer; device applications; electronic properties; gain enhancement; heterojunction; heterojunction interface; intermediate temperature growth; low-temperature GaAs heterojunction; low-temperature growth; mixers; molecular beam epitaxy growth; optical properties; photodetectors; temperature ranges; transistors; trenches; Dark current; Dynamic range; Electron traps; Etching; Gallium arsenide; Heterojunctions; Molecular beam epitaxial growth; Optical computing; Photodetectors; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676158
