Title :
SET and RESET pulse characterization in BJT-selected phase-change memories
Author :
Bedeschi, F. ; Bonizzoni, E. ; Casagrande, G. ; Gastaldi, R. ; Resta, C. ; Torelli, G. ; Zella, D.
Author_Institution :
Memory Product Group, STMicroelectronics, Agrate Brianza, Italy
Abstract :
This paper presents program pulse characterization in an 8-Mb BJT-selected phase-change memory test chip. Experimental results of the impact of the bit-line resistance over programming pulse efficiency are provided. Furthermore, in order to compensate for spreads in cell physical parameters in an array portion, a non-conventional staircase-down program pulse is proposed and experimentally evaluated.
Keywords :
bipolar memory circuits; phase change materials; random-access storage; 8 Mbit; BJT-selected phase-change memories; RESET pulse characterization; SET pulse characterization; bit-line resistance effects; cell physical parameter spread compensation; nonvolatile memories; programming pulse efficiency; staircase-down program pulse; Amorphous materials; Crystalline materials; Crystallization; Electronic equipment testing; Impedance; Material storage; Nonvolatile memory; Phase change materials; Phase change memory; Temperature;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1464826
