MBE growth of laterally antiphase-patterned GaAs films using thin Ge layers for waveguide mixing

Author

Eyres, L.A. ; Ebert, C.B. ; Fejer, M.M. ; Harris, J.S., Jr

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

276

Abstract

Summary form only given. The authors have developed an all-epitaxial technique to fabricate orientation-patterned GaAs films. This technique could make possible orientation-patterned waveguide devices with extremely small (<100 /spl Aring/) corrugations and thereby reduce associated waveguide losses in these devices, as scattering losses scale nonlinearily with corrugation amplitude.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; molecular beam epitaxial growth; optical fabrication; optical losses; optical planar waveguides; semiconductor heterojunctions; 100 A; GaAs; GaAs films; GaAs-Ge; Ge; MBE growth; all-epitaxial technique; corrugation amplitude; corrugations; fabrication; laterally antiphase-patterned films; nonlinear scaling; orientation-patterned films; orientation-patterned waveguide devices; scattering losses; thin Ge layers; waveguide losses; waveguide mixing; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Optical films; Optical surface waves; Optical waveguides; Semiconductor waveguides; Substrates; Wavelength division multiplexing; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676160

Filename

676160