Title :
14-W GaN-based microwave power amplifiers
Author :
Wu, Y.-F. ; Wapolnek, D. ; Ibbetson, J. ; Parikh, P. ; Keller, B.P. ; Mishra, U.K.
Author_Institution :
Nitres Inc., Goleta, CA, USA
Abstract :
High-power GaN-based flip-chip ICs are demonstrated using AlGaN/GaN High-Electron-Mobility-Transistors (HEMTs) as the active devices and AlN as the circuit substrates. The circuits achieved 6-10 GHz bandwidth, 9 dB linear gain and 14.1-W output power. This power level is the highest for a GaN-based amplifier to date, and is a factor of 4-7 higher than conventional GaAs-HEMT-based amplifiers using the same size of output devices.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; flip-chip devices; gallium compounds; wide band gap semiconductors; 14 W; 6 to 10 GHz; 9 dB; GaN; GaN HEMT; flip-chip IC; microwave power amplifier; Aluminum gallium nitride; Bandwidth; Circuits; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Microwave amplifiers; Microwave devices; Power amplifiers;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863517
