DocumentCode
3543244
Title
A high-performance NAND and PRAM hybrid storage design for consumer electronic devices
Author
Lee, Hyung Gyu ; Ryu, Seungwoo
Author_Institution
Samsung Adv. Inst. of Technol., Samsung Electron. Co. Ltd., Giheung, South Korea
fYear
2010
fDate
9-13 Jan. 2010
Firstpage
247
Lastpage
248
Abstract
This paper presents a high performance storage solution for CE devices. The proposed storage consists of NAND flash memory and PRAM device. By the complementary use of two memory devices, we dramatically enhance the performance and life-time of NAND flash-based storage.
Keywords
NAND circuits; consumer electronics; flash memories; phase change memories; PRAM hybrid storage design; consumer electronic devices; high-performance NAND flash memory; memory devices; Cloud computing; Consumer electronics; Costs; Flash memory; Hard disks; Mobile computing; Nonvolatile memory; Paper technology; Phase change random access memory; Power system reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Consumer Electronics (ICCE), 2010 Digest of Technical Papers International Conference on
Conference_Location
Las Vegas, NV
Print_ISBN
978-1-4244-4314-7
Electronic_ISBN
978-1-4244-4316-1
Type
conf
DOI
10.1109/ICCE.2010.5418766
Filename
5418766
Link To Document