DocumentCode
3543260
Title
An adapted tunneling model for MgO-based magnetic tunneling junctions
Author
Chen, B.J. ; Tan, S.G. ; Cai, Kechao
Author_Institution
Data Storage Inst., Singapore, Singapore
fYear
2012
fDate
Oct. 31 2012-Nov. 2 2012
Firstpage
7
Lastpage
11
Abstract
We present a model for calculating the tunneling conductance and thus the tunneling magnetoresistance for MgO-based magnetic tunneling junctions. Both effects from the interface scattering and the barrier imperfection are considered in the model by introducing additional parameters. The temperature dependence of resistance is included by using a phenomenological model. This model successfully interprets the experimental results in the published literatures.
Keywords
magnesium compounds; magnetic tunnelling; magnetoresistance; MgO; adapted tunneling model; barrier imperfection; interface scattering; magnetic tunneling junctions; phenomenological model; temperature dependence; tunneling conductance; tunneling magnetoresistance; Electrodes; Iron; Junctions; Magnetic tunneling; Scattering; Tunneling magnetoresistance; MgO barrier; magnetic tunneling junctions; tunneling model;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location
Singapore
Print_ISBN
978-1-4673-2847-0
Type
conf
DOI
10.1109/NVMTS.2013.6632850
Filename
6632850
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