Title :
Dependency of NAND flash memory cells on random dopant fluctuation (RDF) effects
Author :
Jun Geun Kang ; Boram Han ; Kyoung-Rok Han ; Sung Jae Chung ; Gyu-Seog Cho ; Sung-Kye Park ; Woo Young Choi
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
Dependency of random-dopant-fluctuation (RDF) on NAND flash memory cells has been simulated. It has been shown that the RDF effects are more serious in NAND flash memory cells than in CMOS devices. The simulation results show the variation of threshold voltage, on- and off-current depending on the doping concentration. Also, the program and erase characteristics of NAND flash memory cells have been evaluated depending on the RDF effects.
Keywords :
CMOS logic circuits; CMOS memory circuits; NAND circuits; flash memories; CMOS devices; NAND flash memory cells; RDF effect; doping concentration; program-erase characteristics; random dopant fluctuation effect; threshold voltage; CMOS integrated circuits; Doping; Flash memories; Logic gates; MOSFET; Resource description framework; Threshold voltage; NAND flash memory cell; random dopant fluctuation (RDF); threshold voltage;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2847-0
DOI :
10.1109/NVMTS.2013.6632858
