Title :
Investigation of resistive switching in bipolar TaOx-based resistive random access memory
Author :
Zhuo, V.Y.-Q. ; Jiang, Yizhang ; Sze, J.Y. ; Zhang, Zhenhao ; Pan, J.S. ; Zhao, Rong ; Shi, L.P. ; Chong, T.C. ; Robertson, John
Author_Institution :
Data Storage I nstitute, A*STAR, Singapore, Singapore
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
Al/Ta2O5/Pt RRAM cell was successfully demonstrated with stable bipolar switching. Band alignment for the structure of Al/Ta2O5/Pt was obtained using high-resolution X-ray photoelectron spectroscopy to investigate resistance switching behavior. Hole barrier heights of Ta2O5 on metals Pt and Al were extracted using core level and valence band spectra. The energy band alignments of Pt/TaOx and Al/TaOx were thus determined and correlated to conduction mechanisms governing SET and RESET processes of actual bipolar Pt/TaOx/Al devices.
Keywords :
X-ray photoelectron spectra; random-access storage; tantalum compounds; Al-Ta2O5-Pt; RRAM cell; band alignment; bipolar switching; bipolar tantalum oxide-based resistive random access memory; core level; energy band alignment; high-resolution X-ray photoelectron spectroscopy; hole barrier heights; reset process; resistance switching behavior; set process; valence band spectra; Electrodes; Materials; Metals; Random access memory; Resistance; Semiconductor device measurement; Switches; RRAM; Resistive Random Access Memory; TaOx; XPS; bipolar;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2847-0
DOI :
10.1109/NVMTS.2013.6632864
