Title :
Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE
Author :
Yuhao Wang ; Yang Shang ; Hao Yu
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
Spin-transfer torque random access memory (STT-RAM) is one promising candidate for future non-volatile memory based computing, because of its fast access time, high integration density and non-volatility. One major challenge of STT-RAM is to design robust readout circuit in the presence of large MTJ resistance variations. The lack of SPICE-like platform hinders the design validation for hybrid STT-MTJ and CMOS memory structure and readout circuits. In this paper, we have introduced the recently developed NVM-SPICE for the design of STT-RAM with large memory array and also non-destructive single-sawtooth pulse based STT-RAM readout. Compared to the simulation by equivalent circuit, the NVM-SPICE shows 117× faster simulation time for large-array STT-RAM. Moreover, validated by the NVM-SPICE, the proposed single-sawtooth pulse based readout shows 2× faster read latency with 8x larger sensing margin than the existing readout schemes.
Keywords :
SPICE; magnetic storage; magnetic tunnelling; nondestructive readout; random-access storage; spin polarised transport; CMOS memory structure; NVM-SPICE; STT-RAM; design validation; integration density; magnetic tunnel junctions; nondestructive single-sawtooth pulse based readout; nonvolatile memory; read latency; readout circuits; robust readout circuit; sensing margin; spin transfer torque random access memory; Integrated circuit modeling; Magnetic tunneling; Nonvolatile memory; Random access memory; Resistance; Semiconductor device modeling; Sensors;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2847-0
DOI :
10.1109/NVMTS.2013.6632865