Title :
Temperature and series resistance effect on electrical characteristics of epitaxial diode array for phase-change memory application
Author :
Yan Liu ; Zhitang Song ; Bo Liu ; Houpeng Chen ; Guanping Wu ; Chao Zhang ; Lianhong Wang ; Lei Wang ; Songlin Feng
Author_Institution :
State Key Lab. of Functional Mater. for Inf. & Nanotechnol. Lab., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
Temperature dependence and series resistance effect on the electrical characteristics of 40nm node epitaxial PN junction diode array for phase-change memory application were investigated in a temperature range of 233K-358K. According to dual-trench isolation and silicon epitaxial diode array process scheme, buried N+ layer (BNL) acting as word line has played a significant role of phase-change memory structure design and access device scaling. The current-voltage (I-V) curve of the PN junction shows correlation with size dependence and temperature variation. By extrapolating the forward saturation current, the evaluated ideality factor was observed to decrease from 1.18 to 1.06 in the temperature range from 233 to 358K. With 16×16 diode array dimension scaling and BNL series resistance shrinking, forward current of PN junction in predominant role increases with temperature. Temperature and size dependence analysis can assist device design to promote 16×16 epitaxial diode array electrical characteristics for next-generation non-volatile memory application, especially for phase-change memory.
Keywords :
isolation technology; network synthesis; p-n junctions; phase change memories; semiconductor diodes; BNL series resistance shrinking; I-V curve; access device scaling; buried N+ layer; current-voltage curve; dual-trench isolation; electrical characteristics; forward saturation current; ideality factor evaluation; next-generation nonvolatile memory application; node epitaxial PN junction diode array; phase-change memory application; series resistance effect; size 40 nm; size dependence; temperature 233 K to 358 K; temperature dependence effect; Arrays; Epitaxial growth; Resistance; Temperature dependence; Temperature distribution; Temperature measurement;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2847-0
DOI :
10.1109/NVMTS.2013.6632867
