Title :
Investigation of threshold switching of Ge2Sb2Te5 under triangle current pulses
Author :
Yuchan Wang ; Xiaogang Chen ; Zhitang Song ; Shunfen Li
Author_Institution :
State Key Lab. of Functional Mater. for Inf. & Nanotechnol. Lab., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
This paper describes experiments on threshold switching of Ge2Sb2Te5 (GST). In all the experiments, triangle current pulses are applied to study the threshold switching. The results have been presented and analyzed. Ovonic Threshold Switching (OTS) is further proved exist in threshold switching of GST. The low resistance of GST shown in threshold switching can be explained by the unstable filament which is formed under high electric field.
Keywords :
phase change memories; Ge2Sb2Te5; OTS; high electric field; ovonic threshold switching; phase-change memory; triangle current pulses; Electric fields; Oscillators; Phase change materials; Phase change memory; Random access memory; Resistance; Switches; GST; OTS; PCM;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2847-0
DOI :
10.1109/NVMTS.2013.6632870
