DocumentCode
3543394
Title
Investigation of threshold switching of Ge2Sb2Te5 under triangle current pulses
Author
Yuchan Wang ; Xiaogang Chen ; Zhitang Song ; Shunfen Li
Author_Institution
State Key Lab. of Functional Mater. for Inf. & Nanotechnol. Lab., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China
fYear
2012
fDate
Oct. 31 2012-Nov. 2 2012
Firstpage
88
Lastpage
90
Abstract
This paper describes experiments on threshold switching of Ge2Sb2Te5 (GST). In all the experiments, triangle current pulses are applied to study the threshold switching. The results have been presented and analyzed. Ovonic Threshold Switching (OTS) is further proved exist in threshold switching of GST. The low resistance of GST shown in threshold switching can be explained by the unstable filament which is formed under high electric field.
Keywords
phase change memories; Ge2Sb2Te5; OTS; high electric field; ovonic threshold switching; phase-change memory; triangle current pulses; Electric fields; Oscillators; Phase change materials; Phase change memory; Random access memory; Resistance; Switches; GST; OTS; PCM;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location
Singapore
Print_ISBN
978-1-4673-2847-0
Type
conf
DOI
10.1109/NVMTS.2013.6632870
Filename
6632870
Link To Document