Title :
Intrinsic graphene/metal contact
Author :
Nagashio, K. ; Ifuku, R. ; Moriyama, Takumi ; Nishimura, T. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
This paper presents our recent understanding of metal/graphene contact in terms of intrinsic interface obtained from the comparison between resist-free and conventional EB processes, and discusses future challenges to reduce the contact resistivity.
Keywords :
contact resistance; electrical contacts; graphene; EB process; contact resistivity; intrinsic graphene-metal contact; intrinsic interface; Electrodes; Gold; Graphene; Logic gates; Nickel; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478975
