Title :
Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications
Author :
Nakaharai, Shu ; Iijima, Toru ; Ogawa, Shinichi ; Suzuki, Satoshi ; Tsukagoshi, Kazuhito ; Sato, Seiki ; Yokoyama, Naoki
Author_Institution :
GNC, Nat. Inst. of Adv. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 103 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.
Keywords :
CMOS integrated circuits; MOSFET; graphene; helium; He; bias polarity; channel region; dual-gated graphene transistors; electrostatically-reversible polarity; graphene channel; ion irradiated channel; reconfigurable CMOS applications; temperature 200 K; Graphene; Helium; Ion beams; Logic gates; Radiation effects; Temperature; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478976
