• DocumentCode
    3543405
  • Title

    Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications

  • Author

    Nakaharai, Shu ; Iijima, Toru ; Ogawa, Shinichi ; Suzuki, Satoshi ; Tsukagoshi, Kazuhito ; Sato, Seiki ; Yokoyama, Naoki

  • Author_Institution
    GNC, Nat. Inst. of Adv. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 103 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.
  • Keywords
    CMOS integrated circuits; MOSFET; graphene; helium; He; bias polarity; channel region; dual-gated graphene transistors; electrostatically-reversible polarity; graphene channel; ion irradiated channel; reconfigurable CMOS applications; temperature 200 K; Graphene; Helium; Ion beams; Logic gates; Radiation effects; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6478976
  • Filename
    6478976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3543405