DocumentCode :
3543419
Title :
Optimized spin relaxation length in few layer graphene at room temperature
Author :
Yunfei Gao ; Kubo, Y.J. ; Chia-Ching Lin ; Zhihong Chen ; Appenzeller, J.
Author_Institution :
Sch. of Electr. & Comput. Eng. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
For the first time, a spin relaxation length (λS) of ~5μm is measured in graphene at room temperature - a critical accomplishment considering the recent interest in spin based devices for low power applications. The key to this demonstration lies in the use of few layer graphene. In fact, optimum performance is demonstrated here for ~7-layer graphene. Moreover, a 4x increase of λS is observed at 77K.
Keywords :
graphene; low-power electronics; C; layer graphene; low power applications; optimized spin relaxation length; room temperature; spin based devices; temperature 293 K to 298 K; temperature 77 K; Charge carrier density; Current measurement; Electrical resistance measurement; Graphene; Spin valves; Temperature measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6478978
Filename :
6478978
Link To Document :
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