Title :
Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around
Author :
Franklin, Aaron D. ; Koswatta, Siyuranga O. ; Farmer, D. ; Tulevski, George S. ; Smith, Joseph T. ; Miyazoe, H. ; Haensch, Wilfried
Author_Institution :
T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Abstract :
While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate geometries. Here we demonstrate fully self-aligned CNTFETs that include a gate-all-around (GAA) the nanotube channels - the ideal gate geometry for a 1D CNT. These GAA-CNTFETs have 30 nm channel lengths and exhibit n-type operation with high on-currents and good switching behavior that is explained by quantum transport (NEGF) simulations. This work is an important milestone showing that a technologically relevant self-aligned device can be realized with nanotubes.
Keywords :
carbon nanotube field effect transistors; geometry; 1D CNT; GAA-CNTFET; NEGF simulations; channel lengths; fully self-aligned n-type carbon nanotube field-effect transistors; gate geometries; gate-all-around; high on-currents; nanotube channels; quantum transport simulations; size 10 nm; size 30 nm; switching behavior; CNTFETs; Dielectrics; Logic gates; Metals; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478979