Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around

Author

Franklin, Aaron D. ; Koswatta, Siyuranga O. ; Farmer, D. ; Tulevski, George S. ; Smith, Joseph T. ; Miyazoe, H. ; Haensch, Wilfried

Author_Institution

T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA

fYear

2012

fDate

10-13 Dec. 2012

Abstract

While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate geometries. Here we demonstrate fully self-aligned CNTFETs that include a gate-all-around (GAA) the nanotube channels - the ideal gate geometry for a 1D CNT. These GAA-CNTFETs have 30 nm channel lengths and exhibit n-type operation with high on-currents and good switching behavior that is explained by quantum transport (NEGF) simulations. This work is an important milestone showing that a technologically relevant self-aligned device can be realized with nanotubes.

Keywords

carbon nanotube field effect transistors; geometry; 1D CNT; GAA-CNTFET; NEGF simulations; channel lengths; fully self-aligned n-type carbon nanotube field-effect transistors; gate geometries; gate-all-around; high on-currents; nanotube channels; quantum transport simulations; size 10 nm; size 30 nm; switching behavior; CNTFETs; Dielectrics; Logic gates; Metals; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6478979

Filename

6478979