Title :
Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition
Author :
Wang, Huifang ; Yu, Long ; Lee, Youngjoo ; Fang, Wanliang ; Hsu, Allen ; Herring, P. ; Chin, M. ; Dubey, Manisha ; Li, Luoqing ; Kong, Jackson ; Palacios, T.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications.
Keywords :
chemical vapour deposition; logic circuits; molybdenum compounds; nanoelectronics; 2D nanoelectronics; MoS2; NAND gates; chemical vapor deposition; digital electronics; integrated device fabrication; inverters; large-scale 2D electronics; large-scale CVD growth; logic applications; Fabrication; Graphene; Inverters; Logic gates; Substrates; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478980
