DocumentCode :
3543454
Title :
Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm
Author :
Munzenrieder, N. ; Petti, L. ; Zysset, Christoph ; Salvatore, G.A. ; Kinkeldei, Thomas ; Perumal, Charles ; Carta, C. ; Ellinger, F. ; Troster, G.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
We present flexible common source and cascode amplifiers fabricated on a free-standing plastic foil, using amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs with minimum channel lengths of 2.5 μm. Amplifiers are operated at a supply voltage VDD of 5 V, and exhibit maximum cutoff frequencies fC of 1.2 MHz. The circuits stay fully operational while bent to a tensile radius of 5 mm, and after 1000 cycles of repeated bending and re-flattening. To our knowledge, these are the fastest flexible oxide semiconductor based amplifiers.
Keywords :
amplifiers; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; a-TFT amplifier; amorphous-thin film transistor; bending; cascode amplifiers; common source amplifiers; flexible oxide semiconductor based amplifiers; free standing polyimide foil; frequency 1.2 MHz; plastic foil; reflattening; size 2.5 mum; voltage 5 V; Fabrication; Logic gates; Scattering parameters; Strain; Substrates; Thin film transistors; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6478982
Filename :
6478982
Link To Document :
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