DocumentCode
3543505
Title
MOSFET performance and scalability enhancement by insertion of oxygen layers
Author
Xu, Ningsheng ; Damrongplasit, Nattapol ; Takeuchi, H. ; Stephenson, Robert J. ; Cody, Nyles W. ; Yiptong, Augustin ; Huang, Xumin ; Hytha, Marek ; Mears, Robert J. ; Liu, T.-J King
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
fYear
2012
fDate
10-13 Dec. 2012
Abstract
A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.
Keywords
MOSFET; elemental semiconductors; semiconductor device reliability; silicon; MOSFET mobility enhancement; MOSFET performance; Si; channel region; electrostatic integrity improvement; oxygen layer insertion; scalability enhancement; size 14 nm; thin-body MOSFET structures; Electron mobility; FinFETs; Logic gates; MOSFET circuits; Oxygen; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6478990
Filename
6478990
Link To Document