On the performance of low DC power consumption cryogenic amplifiers

Author

Angelov, Iltcho ; Wadefalk, N. ; Stenarson, J. ; Kollberg, E. ; Starski, P. ; Zirath, H.

Author_Institution

Microwave Electron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

1237

Abstract

The performance of broadband, low-noise, low DC consumption cryogenic amplifiers was studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A comprehensive approach used in the modelling and amplifier design can help one to minimize the power consumption and optimize the performance of the amplifier. An 8.5 K average noise temperature and 24 dB gain were experimentally obtained in the frequency range 4-8 GHz with total power consumption of 4 mW for a 2-stage design with commercial GaAs transistors.

Keywords

III-V semiconductors; cryogenic electronics; field effect transistor circuits; gallium arsenide; low-power electronics; microwave amplifiers; microwave circuits; space vehicle electronics; 24 dB; 4 mW; 4 to 8 GHz; DC power consumption; GaAs; amplifier design; average noise temperature; cryogenic amplifiers; two-stage design; Broadband amplifiers; Cryogenics; Design optimization; Energy consumption; Frequency; Gain; Gallium arsenide; Low-noise amplifiers; Power amplifiers; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863583

Filename

863583