A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

Author

Lining Zhang ; Jin He ; Mansun Chan

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2012

fDate

10-13 Dec. 2012

Abstract

A compact model for tunneling field-effect-transistors (TFETs) is presented. The model includes a band-to-band tunneling (BTBT) current module and a terminal charge module. TCAD simulations show that the model describes TFETs currents and capacitances accurately. The model is implemented into a circuit simulator and used to simulate TFETs logic circuits and SRAMs. Unique features in TEFTs including large overshoot during switching, long delay and uni-directional conduction are demonstrated.

Keywords

SRAM chips; field effect transistors; logic circuits; semiconductor device models; tunnel transistors; BTBT current module; SRAM; TCAD simulations; TFET compact model; TFET logic circuit simulation; band-to-band tunneling; circuit behaviors; circuit simulator; double-gate tunneling field-effect-transistors; terminal charge module; unidirectional conduction; Capacitance; Electric potential; Integrated circuit modeling; Logic gates; Semiconductor device modeling; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6478994

Filename

6478994