Title :
Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics
Author :
Hosoi, Toshinori ; Azumo, S. ; Kashiwagi, Y. ; Hosaka, Sumio ; Nakamura, Ryosuke ; Mitani, Shinji ; Nakano, Yoshiaki ; Asahara, Hiroyuki ; Nakamura, T. ; Kimoto, Tatsuya ; Shimura, Toshihiro ; Watanabe, Hiromi
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the SiO2 interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.
Keywords :
aluminium compounds; high-k dielectric thin films; numerical analysis; power MOSFET; semiconductor device reliability; silicon compounds; AlON; SiC; SiO2; electrical characterization; high-k gate dielectric technology; numerical simulation; performance improvement; planar-based MOSFET; power MOSFET; reliability improvement; thickness ratio; trench-based MOSFET; Dielectrics; Leakage current; Logic gates; MOSFETs; Oxidation; Silicon; Silicon carbide;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478998
