Title :
Diamond semiconductor JFETs by selectively grown n+-diamond side gates for next generation power devices
Author :
Iwasaki, Takuya ; Hoshino, Yuichi ; Tsuzuki, Ken ; Kato, Haruhisa ; Makino, Tatsuya ; Ogura, M. ; Takeuchi, D. ; Matsumoto, Tad ; Okushi, H. ; Yamasaki, Shintaro ; Hatano, M.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Diamond semiconductor is an attractive material for next-generation power devices due to its wide band-gap, high breakdown field, and high thermal conductivity. By selective n+-type diamond growth, diamond junction field effect transistors (JFETs) were fabricated and operated from 223 to 573 K. JFETs show very low leakage currents in the 10-15 A range and a steep subthreshold slope (SS) of 81 mV/decade at room temperature. We confirm that the devices possess steep SS and low leakage current in the 10-14-10-15 A r a n ge s up to 423 K.
Keywords :
diamond; junction gate field effect transistors; leakage currents; power field effect transistors; semiconductor growth; thermal conductivity; JFET; diamond semiconductor JFET; high breakdown field; high thermal conductivity; junction field effect transistors; leakage currents; n+-diamond side gates; next generation power devices; selective n+-type diamond growth; steep subthreshold slope; temperature 223 K to 573 K; temperature 293 K to 298 K; Diamonds; Face; JFETs; Leakage current; Logic gates; Temperature; Temperature dependence;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478999
