Title :
The ultimate CMOS device and beyond
Author :
Kuhn, Kelin J. ; Avci, Uygar E. ; Cappellani, A. ; Giles, M.D. ; Haverty, Michael ; Seiyon Kim ; Kotlyar, Roza ; Manipatruni, Sasikanth ; Nikonov, Dmitri ; Pawashe, Chytra ; Radosavljevic, Milos ; Rios, Rafael ; Shankar, Subramaniam ; Vedula, R. ; Chau, R
Author_Institution :
Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA
Abstract :
For the past 40 years, relentless focus on Moore´s Law transistor scaling has delivered ever-improving CMOS transistor density. This paper discusses architectural and materials options which will contribute to the ultimate CMOS device. In addition, the paper reviews device options beyond the ultimate CMOS device.
Keywords :
CMOS integrated circuits; CMOS device; CMOS transistor density; Moore law transistor scaling; CMOS integrated circuits; Face; Logic gates; Manufacturing; Materials; Metals; Performance evaluation;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479001
