Title :
Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs
Author :
De Marchi, Michele ; Sacchetto, Davide ; Frache, Stefano ; Zhang, Juyong ; Gaillardon, Pierre-Emmanuel ; Leblebici, Yusuf ; De Micheli, G.
Author_Institution :
EPFL, Lausanne, Switzerland
Abstract :
We fabricated and characterized new ambipolar silicon nanowire (SiNW) FET transistors featuring two independent gate-all-around electrodes and vertically stacked SiNW channels. One gate electrode enables dynamic configuration of the device polarity (n or p-type), while the other switches on/off the device. Measurement results on silicon show Ion/Ioff > 106 and S ≈ 64mV/dec (70mV/dec) for p(n)-type operation in the same device. We show that XOR operation is embedded in the device characteristic, and we demonstrate for the first time a fully functional 2-transistor XOR gate.
Keywords :
electrodes; elemental semiconductors; field effect transistors; nanoelectronics; nanowires; silicon; Si; ambipolar silicon nanowire FET transistors; device characteristic; double-gate gate-all-around vertically stacked silicon nanowire FET; fully functional 2-transistor XOR gate; independent gate-all-around electrodes; polarity control; switches on-off the device; vertically stacked SiNW channels; Fabrication; Field effect transistors; Integrated circuit modeling; Logic gates; Nanoscale devices; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479004
