Title :
Near-field optical study of InGaN/GaN quantum wells
Author :
Vertikov, A. ; Kuball, M. ; Nurmikko, A.V. ; Chen, Yuanfeng ; Wang, S.Y.
Author_Institution :
Div. of Eng., Brown Univ., Providence, RI, USA
Abstract :
Summary form only given. We use near-field scanning optical microscopy (NSOM) to analyze the influence of defects on the optical properties of InGaN-GaN QWs. The application of NSOM allows high spatial resolution photoluminescence (PL) measurements together with simultaneous topographic imaging. We have investigated both the PL efficiency and spectra of InGaN-GaN QWs, as well as their optical reflectance, with 100-nm spatial resolution.
Keywords :
III-V semiconductors; gallium compounds; image resolution; indium compounds; near-field scanning optical microscopy; optical tomography; photoluminescence; reflectivity; semiconductor quantum wells; InGaN-GaN; InGaN-GaN QWs; InGaN/GaN quantum wells; PL efficiency; defects; high spatial resolution photoluminescence; near-field optical study; near-field scanning optical microscopy; optical properties; optical reflectance; spatial resolution; topographic imaging; Atom optics; Gallium nitride; Graphics; Laser theory; Optical microscopy; Optical reflection; Optimized production technology; Quantum well lasers; Spatial resolution; Surfaces;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676168
