DocumentCode
3543642
Title
A low dynamic power and low leakage power CMOS square-root circuit
Author
Enomoto, Tadayoshi ; Kobayashi, Nobuaki
Author_Institution
Graduate Sch. of Sci. & Eng., Chuo Univ., Tokyo, Japan
fYear
2005
fDate
23-26 May 2005
Firstpage
1678
Abstract
To reduce drastically the dynamic power (PAT) and the leakage power (PST), while increasing the operating speed of a CMOS square-root (SR) circuit, a new SR algorithm and a self-controllable-voltage-level (SVL) circuit, consisting of a single CMOS switch, have been developed. They can not only drastically decrease the number of gates (Gc) in the critical path and the total number of logic gates (G), but also considerably reduce the leakage power. Gc and G of the new 8-bit, 0.16-μm CMOS SR circuit are greatly reduced to 30 and 97, 50.0% and 51.3%, respectively, of those of a conventional SR circuit. Thus, the maximum operating frequency (fc) of the new SR circuit at a supply voltage (VDD) of 1.5 V is 581 MHz, 1.62 times faster than the 358 MHz of the conventional SR circuit. PAT of the new SR circuit, at fc of 200 MHz and VDD of 1.5 V, is reduced to 309 μW, 54.3% of the 569 μW of the conventional SR circuit. PST of the new SR circuit is only 8.8 nW, 1.36% of the 647 nW of the conventional SR circuit.
Keywords
CMOS logic circuits; digital arithmetic; integrated circuit design; logic design; low-power electronics; voltage control; CMOS square-root circuit; CMOS switch; dynamic power; leakage power; operating frequency; operating speed; self-controllable-voltage-level circuit; supply voltage; CMOS logic circuits; Content addressable storage; Frequency; Logic gates; Power engineering and energy; Strontium; Switches; Switching circuits; Systems engineering and theory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1464928
Filename
1464928
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