Title :
RRAM SET speed-disturb dilemma and rapid statistical prediction methodology
Author :
Wun-Cheng Luo ; Jen-Chieh Liu ; Hsien-Tsung Feng ; Yen-Chuan Lin ; Jiun-Jia Huang ; Kuan-Liang Lin ; Tuo-Hung Hou
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.
Keywords :
random-access storage; statistical analysis; stress analysis; RRAM SET speed-disturb dilemma; RRAM devices; percolation model; power-law V-t dependence; rapid ramped-voltage stress; rapid statistical prediction methodology; time-consuming constant-voltage stress; Current measurement; Hafnium compounds; Resistance; Stress; Switches; Voltage measurement; Weibull distribution;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479012
