Title :
Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics
Author :
Veksler, Dekel ; Bersuker, Gennadi ; Chakrabarti, B. ; Vogel, E. ; Deora, S. ; Matthews, K. ; Gilmer, D.C. ; Li, H.-F. ; Gausepohl, S. ; Kirsch, P.D.
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
We introduce a figure of merit (FoM) to quantify RRAM read current instability, a complex multi-level RTN-like signal, generally observed in read current. Log(FoM) follows a normal statistical distribution describing the probability of occurrence of a read current fluctuation of a given amplitude. We demonstrate that peak-to-peak RTN amplitude decreases with the reduction of the read current that enables scaling down RRAM operating currents. The developed statistical model for the read instability allows to estimate the maximum size and minimum operating current for reliable operations of high density RRAM array.
Keywords :
normal distribution; random-access storage; semiconductor device noise; Log(FoM); RRAM characteristics; RRAM read current instability; RTN effect; figure of merit; high density RRAM array operational reliability; maximum size estimation; minimum operating current estimation; multilevel RTN-like signal; normal statistical distribution; peak-to-peak RTN amplitude; random telegraph noise effect; read current fluctuation occurrence probability; read current reduction; statistical evaluation; statistical model; Arrays; Correlation; Current measurement; Electron traps; Gaussian distribution; Noise; Time measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479013