DocumentCode
3543663
Title
Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics
Author
Veksler, Dekel ; Bersuker, Gennadi ; Chakrabarti, B. ; Vogel, E. ; Deora, S. ; Matthews, K. ; Gilmer, D.C. ; Li, H.-F. ; Gausepohl, S. ; Kirsch, P.D.
Author_Institution
SEMATECH, Albany, NY, USA
fYear
2012
fDate
10-13 Dec. 2012
Abstract
We introduce a figure of merit (FoM) to quantify RRAM read current instability, a complex multi-level RTN-like signal, generally observed in read current. Log(FoM) follows a normal statistical distribution describing the probability of occurrence of a read current fluctuation of a given amplitude. We demonstrate that peak-to-peak RTN amplitude decreases with the reduction of the read current that enables scaling down RRAM operating currents. The developed statistical model for the read instability allows to estimate the maximum size and minimum operating current for reliable operations of high density RRAM array.
Keywords
normal distribution; random-access storage; semiconductor device noise; Log(FoM); RRAM characteristics; RRAM read current instability; RTN effect; figure of merit; high density RRAM array operational reliability; maximum size estimation; minimum operating current estimation; multilevel RTN-like signal; normal statistical distribution; peak-to-peak RTN amplitude; random telegraph noise effect; read current fluctuation occurrence probability; read current reduction; statistical evaluation; statistical model; Arrays; Correlation; Current measurement; Electron traps; Gaussian distribution; Noise; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479013
Filename
6479013
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