Dependence of laser beam induced current on geometry of the junction for HgCdTe photodiodes

The dependence of laser beam induced current (LBIC) on the junction structure of n⁺-on-p HgCdTe photodiode has been numerically investigated. The simulated LBIC profiles are in good agreement with the experimental data. It is found that the peak LBIC magnitude is close to a linear relationship with both junction depth and length. In addition, the shape between two peaks becomes more flat with the increasing junction depth. A lateral and vertical current flow competition mechanism is proposed to explain the junction structure dependence of the LBIC signal.