Inhomogeneous injection in III-nitride diode structures with deep quantum wells

Excessive depth of optically active quantum wells (QWs) in III-nitride light emitters of visible range is one of the main causes of inhomogeneous carrier injection in multiple-quantum-well (MQW) device active region. Deeper QWs imply stronger inhomogeneity of carrier distribution across the active region and support large residual charges of marginally located N-side and P-side QWs. Drift-diffusion transport approximation underestimates the minority carrier supply to marginal QWs which results in higher degree of injection inhomogeneity in transport simulation. We show that electron ballistic overshoot of narrow III-N QWs notably improves the carrier transport in MQW active region but has controversial effect on QW population uniformity.