Independently addressable multispot native-oxide confined (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum well lasers

Author

Sun, D. ; Treat, D.W.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

285

Lastpage

286

Abstract

Summary form only given. Oxidation of aluminum-based III-V compounds has attracted a great deal ofinterest in fabricating edge-emitting and vertical cavity surface-emitting lasers recently. In this paper, we report results for independently addressable multispot native-oxide confined InGaP-AlGaInP quantum well (QW) visible laser diodes. The oxidation of the p-AlInP cladding layer in the laser structure allow the fabrication of low loss waveguide and thus high-performance multispot 670-nm lasers.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; waveguide lasers; (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum well lasers; 670 nm; InGaP-AlGaInP; aluminum-based III-V compounds; edge-emitting lasers; high-performance multispot 670-nm lasers; independently addressable multispot native-oxide confined InGaP-AlGaInP QW visible laser diodes; independently addressable multispot native-oxide confined quantum well lasers; laser structure; low loss waveguide; p-AlInP cladding layer; vertical cavity surface-emitting lasers; waveguide lasers; Diode lasers; Laser modes; Optical refraction; Optical waveguides; Quantum well lasers; Sun; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676174

Filename

676174