Title :
Electron time-of-flight measurements in quantum well lasers
Author :
Wood, S.A. ; Somerford, D.J. ; Smowton, P.M. ; Button, C.C. ; Blood, P.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Wales, Cardiff, UK
Abstract :
Summary form only given. We present results obtained by monitoring the minority carrier leakage through the p-cladding using specially designed lasers. We show the conduction band profile through such a laser, which will be referred to as a monitor pit laser. The characteristics of these lasers are identical to a control laser, which is itself typical of standard AlGaInP quantum well lasers.
Keywords :
III-V semiconductors; aluminium compounds; claddings; electron mobility; gallium compounds; high-speed optical techniques; indium compounds; laser variables measurement; monitoring; quantum well lasers; semiconductor device testing; time of flight spectra; AlGaInP; conduction band profile; control laser; electron time-of-flight measurements; minority carrier leakage; monitor pit laser; monitoring; p-cladding; quantum well lasers; standard AlGaInP quantum well lasers; Artificial intelligence; Electrons; Laser mode locking; Laser tuning; Monitoring; Optical pulse shaping; Optical pulses; Quantum well lasers; Radiative recombination; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676175
