• DocumentCode
    3543700
  • Title

    CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: Auditory (Cochlea) and visual (Retina) cognitive processing applications

  • Author

    Suri, Manan ; Bichler, Olivier ; Querlioz, Damien ; Palma, G. ; Vianello, E. ; Vuillaume, Dominique ; Gamrat, Christian ; DeSalvo, B.

  • Author_Institution
    CEA-LETI-MINATEC, Grenoble, France
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    In this work, we demonstrate an original methodology to use Conductive-Bridge RAM (CBRAM) devices as binary synapses in low-power stochastic neuromorphic systems. A new circuit architecture, programming strategy and probabilistic STDP learning rule are proposed. We show, for the first time, how the intrinsic CBRAM device switching probability at ultra-low power can be exploited to implement probabilistic learning rule. Two complex applications are demonstrated: real-time auditory (from 64-channel human cochlea) and visual (from mammalian visual cortex) pattern extraction. A high accuracy (audio pattern sensitivity >2, video detection rate >95%) and ultra-low synaptic-power dissipation (audio 0.55μW, video 74.2μW) are obtained.
  • Keywords
    low-power electronics; neural chips; probability; random-access storage; stochastic processes; CBRAM devices; auditory cognitive processing applications; binary synapses; circuit architecture; cochlea cognitive processing applications; conductive-bridge RAM devices; intrinsic CBRAM device switching probability; low-power stochastic neuromorphic systems; power 0.55 muW; power 74.2 muW; probabilistic STDP learning rule; programming strategy; retina cognitive processing applications; ultralow synaptic-power dissipation; visual cognitive processing applications; Immune system; Neuromorphics; Neurons; Probabilistic logic; Programming; Stochastic processes; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479017
  • Filename
    6479017